TLHB580. vishay semiconductors 1 (5) rev. a3, 04-oct-00 www.vishay.com document number 83021 high efficiency blue led, 5 mm untinted non - diffused package color type technology angle of half intensity blue TLHB580. gan on sic 4 description this device has been redesigned in 1998 replacing sic by gan technology to meet the increasing demand for high efficiency blue leds. it is housed in a 5 mm waterclear plastic package. all packing units are categorized in luminous intensity groups. that allows users to assemble leds with uni- form appearance. features gan on sic technology standard 5 mm t-1 3 / 4 package small mechanical tolerances small viewing angle very high intensity luminous intensity categorized esd class 1 94 8631 applications status lights off / on indicator background illumination readout lights maintenance lights legend light absolute maximum ratings t amb = 25 c, unless otherwise specified TLHB580. parameter test conditions symbol value unit reverse voltage v r 5 v dc forward current t amb 65 c i f 20 ma surge forward current t p 10 s i fsm 0.1 a power dissipation t amb 65 c p v 100 mw junction temperature t j 100 c operating temperature range t amb 40 to +100 c storage temperature range t stg 40 to +100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ambient r thja 350 k/w
TLHB580. vishay semiconductors 2 (5) rev. a3, 04-oct-00 www.vishay.com document number 83021 optical and electrical characteristics t amb = 25 c, unless otherwise specified blue ( TLHB580. ) parameter test conditions type symbol min typ max unit luminous intensity i f = 20 ma TLHB5800 i v 130 380 mcd y f TLHB5801 i v 240 640 mcd dominant wavelength i f = 10 ma d 466 nm peak wavelength i f = 10 ma p 428 nm angle of half intensity i f = 10 ma j + 4 deg forward voltage i f = 20 ma v f 3.9 4.5 v reverse voltage i r = 10 a v r 5 v typical characteristics (t amb = 25 c, unless otherwise specified) 020406080 0 25 50 75 100 125 p power dissipation ( mw ) v t amb ambient temperature ( 5 c ) 100 95 10918 figure 1. power dissipation vs. ambient temperature 0 10 20 30 40 60 020406080 i forward current ( ma ) f t amb ambient temperature ( 5 c ) 100 15884 50 figure 2. 0.4 0.2 0 0.2 0.4 0.6 95 10022 0.6 0.9 0.8 0 5 30 5 10 5 20 5 40 5 50 5 60 5 70 5 80 5 0.7 1.0 i relative luminous intensity v rel figure 3. rel. luminous intensity vs. angular displacement 1 10 100 012345678 v f forward voltage ( v ) 15846 f i forward current ( ma ) figure 4. forward current vs. forward voltage
TLHB580. vishay semiconductors 3 (5) rev. a3, 04-oct-00 www.vishay.com document number 83021 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 102030405060708090100 t amb ambient temperature ( c ) 15847 i relative luminous intensity vrel i f = 10 ma figure 5. rel. luminous intensity vs. ambient temperature 0.01 0.10 1.00 10.00 1 10 100 i f forward current ( ma ) 15848 i relative luminous intensity vrel figure 6. relative luminous intensity vs. forward current 0 20 40 60 80 100 120 350 400 450 500 550 600 wavelength ( nm ) 15849 i relative luminous intensity (%) vrel i f = 10 ma figure 7. relative luminous intensity vs. wavelength
TLHB580. vishay semiconductors 4 (5) rev. a3, 04-oct-00 www.vishay.com document number 83021 dimensions in mm 9511476
TLHB580. vishay semiconductors 5 (5) rev. a3, 04-oct-00 www.vishay.com document number 83021 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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